On the doping mechanism of boron-doped hydrogenated amorphous silicon deposited by rf-co-sputtering

  1. De Lima Jr., M.M.
  2. Marques, F.C.
Revue:
Journal of Non-Crystalline Solids

ISSN: 0022-3093

Année de publication: 2002

Volumen: 299-302

Número: PART 1

Pages: 605-609

Type: Communication dans un congrès

DOI: 10.1016/S0022-3093(01)01205-4 GOOGLE SCHOLAR
La source de données: Scopus