ANA
CROS STOTTER
CATEDRÁTICO/A DE UNIVERSIDAD
Jorge Alejandro
Budagosky Marcilla
Publicaciones en las que colabora con Jorge Alejandro Budagosky Marcilla (11)
2016
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Optical properties of wurtzite GaN/AlN quantum dots grown on non-polar planes: The effect of stacking faults in the reduction of the internal electric field
Materials Science in Semiconductor Processing, Vol. 49, pp. 76-80
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Reprint of: Optical properties of wurtzite GaN/AlN quantum dots grown on non-polar planes: The effect of stacking faults in the reduction of the internal electric field
Materials Science in Semiconductor Processing, Vol. 55, pp. 90-94
2011
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Nucleation of GaN nanowires grown by plasma-assisted molecular beam epitaxy: The effect of temperature
Journal of Crystal Growth, Vol. 334, Núm. 1, pp. 177-180
2010
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Reversed polarized emission in highly strained a -plane GaN/AlN multiple quantum wells
Physical Review B - Condensed Matter and Materials Physics, Vol. 82, Núm. 12
2009
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Anisotropic polarization of non-polar GaN quantum dot emission
Physica Status Solidi (C) Current Topics in Solid State Physics, Vol. 6, Núm. SUPPL. 2
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Depth profiling of optical and vibrational properties in GaN/AlN quantum dot superlattices
Physica Status Solidi (B) Basic Research, Vol. 246, Núm. 6, pp. 1191-1195
2008
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Temperature dependence of the E2h phonon mode of wurtzite GaN/AlN quantum dots
Journal of Applied Physics, Vol. 104, Núm. 9
2007
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Evaluation of strain in GaN/AlN quantum dots by means of resonant Raman scattering: The effect of capping
Physica Status Solidi (C) Current Topics in Solid State Physics
2006
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Influence of strain in the reduction of the internal electric field in GaN/AIN quantum dots grown on a-plane 6H-SiC
Physica Status Solidi (B) Basic Research
2005
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Reduction of the internal electric field in GaN/AlN quantum dots grown on the a-plane of SiC substrates
Physica Status Solidi C: Conferences
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Reduction of the internal electric field in wurtzite a-plane GaN self-assembled quantum dots
Applied Physics Letters, Vol. 87, Núm. 1