Publicacions en què col·labora amb Jorge Alejandro Budagosky Marcilla (11)

2016

  1. Optical properties of wurtzite GaN/AlN quantum dots grown on non-polar planes: The effect of stacking faults in the reduction of the internal electric field

    Materials Science in Semiconductor Processing, Vol. 49, pp. 76-80

  2. Reprint of: Optical properties of wurtzite GaN/AlN quantum dots grown on non-polar planes: The effect of stacking faults in the reduction of the internal electric field

    Materials Science in Semiconductor Processing, Vol. 55, pp. 90-94

2011

  1. Nucleation of GaN nanowires grown by plasma-assisted molecular beam epitaxy: The effect of temperature

    Journal of Crystal Growth, Vol. 334, Núm. 1, pp. 177-180

2010

  1. Reversed polarized emission in highly strained a -plane GaN/AlN multiple quantum wells

    Physical Review B - Condensed Matter and Materials Physics, Vol. 82, Núm. 12

2009

  1. Anisotropic polarization of non-polar GaN quantum dot emission

    Physica Status Solidi (C) Current Topics in Solid State Physics, Vol. 6, Núm. SUPPL. 2

  2. Depth profiling of optical and vibrational properties in GaN/AlN quantum dot superlattices

    Physica Status Solidi (B) Basic Research, Vol. 246, Núm. 6, pp. 1191-1195

2008

  1. Temperature dependence of the E2h phonon mode of wurtzite GaN/AlN quantum dots

    Journal of Applied Physics, Vol. 104, Núm. 9

2007

  1. Evaluation of strain in GaN/AlN quantum dots by means of resonant Raman scattering: The effect of capping

    Physica Status Solidi (C) Current Topics in Solid State Physics

2006

  1. Influence of strain in the reduction of the internal electric field in GaN/AIN quantum dots grown on a-plane 6H-SiC

    Physica Status Solidi (B) Basic Research

2005

  1. Reduction of the internal electric field in GaN/AlN quantum dots grown on the a-plane of SiC substrates

    Physica Status Solidi C: Conferences

  2. Reduction of the internal electric field in wurtzite a-plane GaN self-assembled quantum dots

    Applied Physics Letters, Vol. 87, Núm. 1