Failure analysis of normally-off GaN HEMTs under avalanche conditions

  1. Martínez, P.J.
  2. Letz, S.
  3. Maset, E.
  4. Zhao, D.
Journal:
Semiconductor Science and Technology

ISSN: 1361-6641,  0268-1242

Year of publication: 2020

Volume: 35

Issue: 3

Type: Article

DOI: 10.1088/1361-6641/AB6BAD GOOGLE SCHOLAR

Sustainable development goals

Data source: Scopus