Reduction of the internal electric field in GaN/AlN quantum dots grown on the a-plane of SiC substrates

  1. Garro, N.
  2. Cros, A.
  3. Budagosky, J.A.
  4. Cantarero, A.
  5. Vinattieri, A.
  6. Gurioli, M.
  7. Founta, S.
  8. Mariette, H.
  9. Daudin, B.
Proceedings:
Physica Status Solidi C: Conferences

ISSN: 1610-1634

Year of publication: 2005

Volume: 2

Issue: 11

Pages: 3851-3855

Type: Conference paper

DOI: 10.1002/PSSC.200562014 GOOGLE SCHOLAR

Sustainable development goals

Data source: Scopus