Publicaciones en colaboración con investigadores/as de Universidade Estadual de Campinas (21)

2020

  1. Author Correction: Optical Absorption Exhibits Pseudo-Direct Band Gap of Wurtzite Gallium Phosphide (Scientific Reports, (2020), 10, 1, (7904), 10.1038/s41598-020-64809-4)

    Scientific Reports

  2. Optical Absorption Exhibits Pseudo-Direct Band Gap of Wurtzite Gallium Phosphide

    Scientific Reports, Vol. 10, Núm. 1

2017

  1. Fermi energy dependence of the optical emission in core/shell InAs nanowire homostructures

    Nanotechnology, Vol. 28, Núm. 29

2014

  1. Defect spectroscopy of single ZnO microwires

    Journal of Applied Physics, Vol. 115, Núm. 13

2013

  1. Optical phonon modes of wurtzite InP

    Applied Physics Letters, Vol. 102, Núm. 12

2012

  1. Optical emission of InAs nanowires

    Nanotechnology, Vol. 23, Núm. 37

2011

  1. E 1 gap of wurtzite InAs single nanowires measured by means of resonant raman spectroscopy

    AIP Conference Proceedings

  2. Polarized and resonant Raman spectroscopy on single InAs nanowires

    Physical Review B - Condensed Matter and Materials Physics, Vol. 84, Núm. 8

  3. Spatial carrier distribution in InP/GaAs type II quantum dots and quantum posts

    Nanotechnology, Vol. 22, Núm. 6

2010

  1. Influence of krypton atoms on the structure of hydrogenated amorphous carbon deposited by plasma enhanced chemical vapor deposition

    Journal of Applied Physics, Vol. 108, Núm. 12

  2. Valence-band splitting energies in wurtzite InP nanowires: Photoluminescence spectroscopy and ab initio calculations

    Physical Review B - Condensed Matter and Materials Physics, Vol. 82, Núm. 12

2004

  1. The Staebler-Wronski effect in amorphous germanium

    Journal of Non-Crystalline Solids

2002

  1. Boron doping of hydrogenated amorphous silicon prepared by rf-co-sputtering

    Brazilian Journal of Physics

  2. ESR observations of paramagnetic centers in intrinsic hydrogenated microcrystalline silicon

    Physical Review B - Condensed Matter and Materials Physics, Vol. 65, Núm. 23, pp. 2353241-2353246

  3. On the doping mechanism of boron-doped hydrogenated amorphous silicon deposited by rf-co-sputtering

    Journal of Non-Crystalline Solids

  4. Paramagnetic centers in microcrystalline silicon

    Materials Research Society Symposium - Proceedings

  5. Recombination mechanism of excess carriers in hydrogenated amorphous germanium

    Journal of Non-Crystalline Solids, Vol. 299-302, pp. 571-574

2000

  1. Optically excited paramagnetic centers in hydrogenated amorphous germanium

    Journal of Non-Crystalline Solids, Vol. 266-269 B, pp. 717-720

1999

  1. Coefficient of thermal expansion and elastic modulus of thin films

    Journal of Applied Physics, Vol. 86, Núm. 9, pp. 4936-4942

  2. Hard a-C:H films deposited at high deposition rates

    Thin Solid Films, Vol. 343-344, Núm. 1-2, pp. 222-225