Multi-pulse characterization of trapping/detrapping mechanisms in AlGaN/GaN high electromobility transistors

  1. Martínez, P.J.
  2. Maset, E.
  3. Gilabert, D.
  4. Sanchis-Kilders, E.
Revue:
Semiconductor Science and Technology

ISSN: 1361-6641,  0268-1242

Année de publication: 2019

Volumen: 34

Número: 10

Type: Article

DOI: 10.1088/1361-6641/AB3FE8 GOOGLE SCHOLAR

Objectifs de Développement Durable

La source de données: Scopus