Publicaciones (129) Publicaciones de ANA CROS STOTTER

2024

  1. Exploring the structure and electronic properties of individual hybrid GO/rGO flakes

    Applied Surface Science, Vol. 642

2023

  1. Boosting Photoluminescence in MAPbBr3 Single Crystals through Laser-Based Surface Modification

    ACS Photonics, Vol. 10, Núm. 12, pp. 4151-4159

  2. Confocal Micro-Raman Spectroscopy Study of Phonon-Plasmon Modes in GaN Structures for Power Devices

    14th Spanish Conference on Electron Devices, CDE 2023 - Proceedings

  3. Facile and Low-Cost Fabrication of SiO2-Covered Au Nanoislands for Combined Plasmonic Enhanced Fluorescence Microscopy and SERS

    Nanomaterials, Vol. 13, Núm. 19

  4. Ultrathin GaN quantum wells in AlN nanowires for UV-C emission

    Nanotechnology, Vol. 34, Núm. 27

2022

  1. Effect of chain extenders on the hydrolytic degradation of soybean polyurethane

    Journal of Applied Polymer Science, Vol. 139, Núm. 28

2021

  1. Effect of chain extender on the morphology, thermal, viscoelastic, and dielectric behavior of soybean polyurethane

    Journal of Applied Polymer Science, Vol. 138, Núm. 27

  2. Growth of zinc-blende GaN on muscovite mica by molecular beam epitaxy

    Nanotechnology, Vol. 32, Núm. 2

  3. Resonant Raman scattering of core-shell GaN/AlN nanowires

    Nanotechnology, Vol. 32, Núm. 8

  4. Shallow donor and DX state in Si doped AlN nanowires grown by molecular beam epitaxy

    Applied Physics Letters, Vol. 119, Núm. 26

  5. The role of surface diffusion in the growth mechanism of III-nitride nanowires and nanotubes

    Nanotechnology, Vol. 32, Núm. 8

2020

  1. Impact of kinetics on the growth of GaN on graphene by plasma-assisted molecular beam epitaxy

    Nanotechnology, Vol. 31, Núm. 11

  2. Influence of si substrate preparation procedure on polarity of self-assembled gan nanowires on si(111): Kelvin probe force microscopy studies

    Electronics (Switzerland), Vol. 9, Núm. 11, pp. 1-13

  3. Strain relaxation, extended defects and doping effects in InxGa1-xN/GaN heterostructures investigated by surface photovoltage

    Applied Surface Science, Vol. 515

2019

  1. Mg and in Codoped p-type AlN Nanowires for pn Junction Realization

    Nano Letters, Vol. 19, Núm. 12, pp. 8357-8364

  2. Polarity conversion of GaN nanowires grown by plasma-assisted molecular beam epitaxy

    Applied Physics Letters, Vol. 114, Núm. 17

  3. Spontaneous intercalation of Ga and in bilayers during plasma-assisted molecular beam epitaxy growth of GaN on graphene on SiC

    Nanotechnology, Vol. 30, Núm. 37

2018

  1. Dopant radial inhomogeneity in Mg-doped GaN nanowires

    Nanotechnology, Vol. 29, Núm. 25

  2. Layered-expanded mesostructured silicas: Generalized synthesis and functionalization

    Nanomaterials, Vol. 8, Núm. 10

  3. Probing the Local Electrical Properties of Al(In,Ga)N by Kelvin Probe Force Microscopy

    Physica Status Solidi (B) Basic Research, Vol. 255, Núm. 5