Publicaciones en las que colabora con ANA CROS STOTTER (36)

2024

  1. Exploring the structure and electronic properties of individual hybrid GO/rGO flakes

    Applied Surface Science, Vol. 642

2023

  1. Boosting Photoluminescence in MAPbBr3 Single Crystals through Laser-Based Surface Modification

    ACS Photonics, Vol. 10, Núm. 12, pp. 4151-4159

  2. Confocal Micro-Raman Spectroscopy Study of Phonon-Plasmon Modes in GaN Structures for Power Devices

    14th Spanish Conference on Electron Devices, CDE 2023 - Proceedings

  3. Facile and Low-Cost Fabrication of SiO2-Covered Au Nanoislands for Combined Plasmonic Enhanced Fluorescence Microscopy and SERS

    Nanomaterials, Vol. 13, Núm. 19

2022

  1. Effect of chain extenders on the hydrolytic degradation of soybean polyurethane

    Journal of Applied Polymer Science, Vol. 139, Núm. 28

2021

  1. Effect of chain extender on the morphology, thermal, viscoelastic, and dielectric behavior of soybean polyurethane

    Journal of Applied Polymer Science, Vol. 138, Núm. 27

  2. Growth of zinc-blende GaN on muscovite mica by molecular beam epitaxy

    Nanotechnology, Vol. 32, Núm. 2

  3. The role of surface diffusion in the growth mechanism of III-nitride nanowires and nanotubes

    Nanotechnology, Vol. 32, Núm. 8

2020

  1. Impact of kinetics on the growth of GaN on graphene by plasma-assisted molecular beam epitaxy

    Nanotechnology, Vol. 31, Núm. 11

  2. Influence of si substrate preparation procedure on polarity of self-assembled gan nanowires on si(111): Kelvin probe force microscopy studies

    Electronics (Switzerland), Vol. 9, Núm. 11, pp. 1-13

2019

  1. Mg and in Codoped p-type AlN Nanowires for pn Junction Realization

    Nano Letters, Vol. 19, Núm. 12, pp. 8357-8364

  2. Polarity conversion of GaN nanowires grown by plasma-assisted molecular beam epitaxy

    Applied Physics Letters, Vol. 114, Núm. 17

  3. Spontaneous intercalation of Ga and in bilayers during plasma-assisted molecular beam epitaxy growth of GaN on graphene on SiC

    Nanotechnology, Vol. 30, Núm. 37

2018

  1. Dopant radial inhomogeneity in Mg-doped GaN nanowires

    Nanotechnology, Vol. 29, Núm. 25

  2. Probing the Local Electrical Properties of Al(In,Ga)N by Kelvin Probe Force Microscopy

    Physica Status Solidi (B) Basic Research, Vol. 255, Núm. 5

2016

  1. Optical properties of wurtzite GaN/AlN quantum dots grown on non-polar planes: The effect of stacking faults in the reduction of the internal electric field

    Materials Science in Semiconductor Processing, Vol. 49, pp. 76-80

  2. Reprint of: Optical properties of wurtzite GaN/AlN quantum dots grown on non-polar planes: The effect of stacking faults in the reduction of the internal electric field

    Materials Science in Semiconductor Processing, Vol. 55, pp. 90-94

2015

  1. Assessment of Polarity in GaN Self-Assembled Nanowires by Electrical Force Microscopy

    Nano Letters, Vol. 15, Núm. 10, pp. 6770-6776

2011

  1. Erratum: Optical properties of nitride nanostructures (Annalen der Physik (Leipzig) (2011) 523 (51))

    Annalen der Physik (Leipzig)

  2. Optical properties of nitride nanostructures

    Annalen der Physik (Leipzig), Vol. 523, Núm. 1-2, pp. 51-61