Publicacions en què col·labora amb ANA CROS STOTTER (17)

2023

  1. Ultrathin GaN quantum wells in AlN nanowires for UV-C emission

    Nanotechnology, Vol. 34, Núm. 27

2021

  1. Resonant Raman scattering of core-shell GaN/AlN nanowires

    Nanotechnology, Vol. 32, Núm. 8

2016

  1. Optical properties of wurtzite GaN/AlN quantum dots grown on non-polar planes: The effect of stacking faults in the reduction of the internal electric field

    Materials Science in Semiconductor Processing, Vol. 49, pp. 76-80

  2. Reprint of: Optical properties of wurtzite GaN/AlN quantum dots grown on non-polar planes: The effect of stacking faults in the reduction of the internal electric field

    Materials Science in Semiconductor Processing, Vol. 55, pp. 90-94

2011

  1. Optical properties of nitride nanostructures

    Annalen der Physik (Leipzig), Vol. 523, Núm. 1-2, pp. 51-61

2010

  1. Reversed polarized emission in highly strained a -plane GaN/AlN multiple quantum wells

    Physical Review B - Condensed Matter and Materials Physics, Vol. 82, Núm. 12

2009

  1. Anisotropic polarization of non-polar GaN quantum dot emission

    Physica Status Solidi (C) Current Topics in Solid State Physics, Vol. 6, Núm. SUPPL. 2

2008

  1. Optical and Vibrational Properties of Self-assembled GaN Quantum Dots

    Handbook of Self Assembled Semiconductor Nanostructures for Novel Devices in Photonics and Electronics (Elsevier Inc.), pp. 230-270

  2. Temperature dependence of the E2h phonon mode of wurtzite GaN/AlN quantum dots

    Journal of Applied Physics, Vol. 104, Núm. 9

2007

  1. Vibrational modes and strain in GaN/AlN quantum dot stacks: Dependence on spacer thickness

    Physica Status Solidi (C) Current Topics in Solid State Physics

2006

  1. Influence of strain in the reduction of the internal electric field in GaN/AIN quantum dots grown on a-plane 6H-SiC

    Physica Status Solidi (B) Basic Research

  2. Raman study and theoretical calculations of strain in GaN quantum dot multilayers

    Physical Review B - Condensed Matter and Materials Physics, Vol. 73, Núm. 11

  3. Resonant Raman scattering in self-assembled GaNAlN quantum dots

    Physical Review B - Condensed Matter and Materials Physics, Vol. 74, Núm. 7

2005

  1. Deformation profile in GaN quantum dots: Medium-energy ion scattering experiments and theoretical calculations

    Physical Review B - Condensed Matter and Materials Physics, Vol. 72, Núm. 11

  2. Raman study of strain in GaN/AIN quantum dot multilayered structures

    Physica Status Solidi C: Conferences

  3. Raman study of strain relaxation in GaN/AlN quantum dots

    AIP Conference Proceedings

  4. Raman study of strain relaxation in GaN/AlN quantum dots

    Physics of Semiconductors, Pts A and B