Publicacións nas que colabora con ANDRES CANTARERO SAEZ (35)

2020

  1. Thermally Tunable Surface Acoustic Wave Cavities

    IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control, Vol. 67, Núm. 4, pp. 850-854

2019

  1. Elemental distribution and structural characterization of gan/ingan core-shell single nanowires by hard x-ray synchrotron nanoprobes

    Nanomaterials, Vol. 9, Núm. 5

2017

  1. Fermi energy dependence of the optical emission in core/shell InAs nanowire homostructures

    Nanotechnology, Vol. 28, Núm. 29

2014

  1. Spontaneous core-shell elemental distribution in In-rich InxGa1-xN nanowires grown by molecular beam epitaxy

    Nanotechnology, Vol. 25, Núm. 7

2012

  1. Acoustically driven photon antibunching in nanowires

    Nano Letters, Vol. 12, Núm. 1, pp. 252-258

  2. Carrier transport in GaAs nanowires using surface acoustic waves

    Materials Research Society Symposium Proceedings

  3. Inhomogeneous electron distribution in InN nanowires: Influence on the optical properties

    Physica Status Solidi (C) Current Topics in Solid State Physics, Vol. 9, Núm. 3-4, pp. 1001-1004

2011

  1. Optical properties of nitride nanostructures

    Annalen der Physik (Leipzig), Vol. 523, Núm. 1-2, pp. 51-61

2010

  1. Inhomogeneous free-electron distribution in InN nanowires: Photoluminescence excitation experiments

    Physical Review B - Condensed Matter and Materials Physics, Vol. 82, Núm. 12

  2. LDA+U and tight-binding electronic structure of InN nanowires

    Physical Review B - Condensed Matter and Materials Physics, Vol. 82, Núm. 16

2009

  1. Tight-binding study of the optical properties of GaN/AlN polar and nonpolar quantum wells

    Microelectronics Journal, Vol. 40, Núm. 3, pp. 418-420

2008

  1. Optical and Vibrational Properties of Self-assembled GaN Quantum Dots

    Handbook of Self Assembled Semiconductor Nanostructures for Novel Devices in Photonics and Electronics (Elsevier Inc.), pp. 230-270

2007

  1. Vibrational modes and strain in GaN/AlN quantum dot stacks: Dependence on spacer thickness

    Physica Status Solidi (C) Current Topics in Solid State Physics

2006

  1. Finite size effects on the optical transitions in quantum rings under a magnetic field

    European Physical Journal B, Vol. 53, Núm. 1, pp. 99-108

  2. Influence of strain in the reduction of the internal electric field in GaN/AIN quantum dots grown on a-plane 6H-SiC

    Physica Status Solidi (B) Basic Research

  3. Raman study and theoretical calculations of strain in GaN quantum dot multilayers

    Physical Review B - Condensed Matter and Materials Physics, Vol. 73, Núm. 11

  4. Resonant Raman scattering in self-assembled GaNAlN quantum dots

    Physical Review B - Condensed Matter and Materials Physics, Vol. 74, Núm. 7

2005

  1. Raman study of strain in GaN/AIN quantum dot multilayered structures

    Physica Status Solidi C: Conferences

  2. Raman study of strain relaxation in GaN/AlN quantum dots

    AIP Conference Proceedings

  3. Raman study of strain relaxation in GaN/AlN quantum dots

    Physics of Semiconductors, Pts A and B