ALBERTO
GARCIA CRISTOBAL
TITULAR DE UNIVERSIDAD
ANDRES
CANTARERO SAEZ
EMÉRITO/A UNIVERSIDAD
Publikationen, an denen er mitarbeitet ANDRES CANTARERO SAEZ (35)
2020
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Thermally Tunable Surface Acoustic Wave Cavities
IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control, Vol. 67, Núm. 4, pp. 850-854
2019
2017
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Fermi energy dependence of the optical emission in core/shell InAs nanowire homostructures
Nanotechnology, Vol. 28, Núm. 29
2014
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Spontaneous core-shell elemental distribution in In-rich InxGa1-xN nanowires grown by molecular beam epitaxy
Nanotechnology, Vol. 25, Núm. 7
2012
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Acoustically driven photon antibunching in nanowires
Nano Letters, Vol. 12, Núm. 1, pp. 252-258
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Carrier transport in GaAs nanowires using surface acoustic waves
Materials Research Society Symposium Proceedings
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Inhomogeneous electron distribution in InN nanowires: Influence on the optical properties
Physica Status Solidi (C) Current Topics in Solid State Physics, Vol. 9, Núm. 3-4, pp. 1001-1004
2011
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Optical properties of nitride nanostructures
Annalen der Physik (Leipzig), Vol. 523, Núm. 1-2, pp. 51-61
2010
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Inhomogeneous free-electron distribution in InN nanowires: Photoluminescence excitation experiments
Physical Review B - Condensed Matter and Materials Physics, Vol. 82, Núm. 12
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LDA+U and tight-binding electronic structure of InN nanowires
Physical Review B - Condensed Matter and Materials Physics, Vol. 82, Núm. 16
2009
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Tight-binding study of the optical properties of GaN/AlN polar and nonpolar quantum wells
Microelectronics Journal, Vol. 40, Núm. 3, pp. 418-420
2008
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Optical and Vibrational Properties of Self-assembled GaN Quantum Dots
Handbook of Self Assembled Semiconductor Nanostructures for Novel Devices in Photonics and Electronics (Elsevier Inc.), pp. 230-270
2007
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Vibrational modes and strain in GaN/AlN quantum dot stacks: Dependence on spacer thickness
Physica Status Solidi (C) Current Topics in Solid State Physics
2006
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Finite size effects on the optical transitions in quantum rings under a magnetic field
European Physical Journal B, Vol. 53, Núm. 1, pp. 99-108
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Influence of strain in the reduction of the internal electric field in GaN/AIN quantum dots grown on a-plane 6H-SiC
Physica Status Solidi (B) Basic Research
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Raman study and theoretical calculations of strain in GaN quantum dot multilayers
Physical Review B - Condensed Matter and Materials Physics, Vol. 73, Núm. 11
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Resonant Raman scattering in self-assembled GaNAlN quantum dots
Physical Review B - Condensed Matter and Materials Physics, Vol. 74, Núm. 7
2005
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Raman study of strain in GaN/AIN quantum dot multilayered structures
Physica Status Solidi C: Conferences
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Raman study of strain relaxation in GaN/AlN quantum dots
AIP Conference Proceedings
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Raman study of strain relaxation in GaN/AlN quantum dots
Physics of Semiconductors, Pts A and B