Gema Martínez Criado-rekin lankidetzan egindako argitalpenak (20)

2019

  1. Elemental distribution and structural characterization of gan/ingan core-shell single nanowires by hard x-ray synchrotron nanoprobes

    Nanomaterials, Vol. 9, Núm. 5

2014

  1. Physical properties and applications of InxGa1-xN nanowires

    AIP Conference Proceedings

  2. Spontaneous core-shell elemental distribution in In-rich InxGa1-xN nanowires grown by molecular beam epitaxy

    Nanotechnology, Vol. 25, Núm. 7

2013

  1. Radial composition of single InGaN nanowires: A combined study by EDX, Raman spectroscopy, and X-ray diffraction

    Physica Status Solidi - Rapid Research Letters, Vol. 7, Núm. 10, pp. 864-867

2011

  1. Direct observation of elemental segregation in InGaN nanowires by X-ray nanoprobe

    Physica Status Solidi - Rapid Research Letters

  2. Extended x-ray absorption fine structure in Ga1-xMnxN/SiC films with high Mn content

    Physical Review B - Condensed Matter and Materials Physics, Vol. 83, Núm. 17

2010

  1. Optical investigation of ZnO nanowires

    Acta Physica Polonica A

2009

  1. X-ray absorption near-edge structure of GaN with high Mn concentration grown on SiC

    Journal of Physics Condensed Matter, Vol. 21, Núm. 29

2008

  1. X-ray absorption in GaGdN: A study of local structure

    Applied Physics Letters, Vol. 93, Núm. 2

2006

  1. X-ray absorption near edge spectroscopy at the Mn K-edge in highly homogeneous GaMnN diluted magnetic semiconductors

    Physica Status Solidi (B) Basic Research

2003

  1. Optical study of gallium and nitrogen polarity layers of GaN grown on sapphire

    Physica Status Solidi C: Conferences

  2. Study of inversion domain pyramids formed during the GaN:Mg growth

    Solid-State Electronics

2002

  1. Two-dimensional electron gas effects on the photoluminescence from a nonintentionally doped AlGaN/GaN heterojunction

    Physica Status Solidi C: Conferences

2001

  1. Excitonic transitions in homoepitaxial GaN

    Physica Status Solidi (B) Basic Research, Vol. 228, Núm. 2, pp. 497-500

  2. Photoluminescence of Ga-face AlGaN/GaN single heterostructures

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 82, Núm. 1-3, pp. 200-202

  3. Photoluminescence study of excitons in homoepitaxial GaN

    Journal of Applied Physics, Vol. 90, Núm. 11, pp. 5627-5631

  4. Residual strain effects on the two-dimensional electron gas concentration of AIGaN/GaN heterostructures

    Journal of Applied Physics, Vol. 90, Núm. 9, pp. 4735-4740

2000

  1. Optical characterization of Mg-doped GaN films grown by metalorganic chemical vapor phase deposition

    Journal of Applied Physics, Vol. 88, Núm. 6, pp. 3470-3478

1999

  1. Growth and optical characterization of indirect-gap AlxGa1-xAs alloys

    Journal of Applied Physics, Vol. 86, Núm. 1, pp. 418-424

1997

  1. The effect of reducing dimensionality on the excitonic recombination in InAs/InP heterostructures

    Physica Status Solidi (A) Applied Research, Vol. 164, Núm. 1, pp. 155-158