Gema
Martínez Criado
Publications by the researcher in collaboration with Gema Martínez Criado (20)
2019
2014
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Physical properties and applications of InxGa1-xN nanowires
AIP Conference Proceedings
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Spontaneous core-shell elemental distribution in In-rich InxGa1-xN nanowires grown by molecular beam epitaxy
Nanotechnology, Vol. 25, Núm. 7
2013
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Radial composition of single InGaN nanowires: A combined study by EDX, Raman spectroscopy, and X-ray diffraction
Physica Status Solidi - Rapid Research Letters, Vol. 7, Núm. 10, pp. 864-867
2011
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Direct observation of elemental segregation in InGaN nanowires by X-ray nanoprobe
Physica Status Solidi - Rapid Research Letters
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Extended x-ray absorption fine structure in Ga1-xMnxN/SiC films with high Mn content
Physical Review B - Condensed Matter and Materials Physics, Vol. 83, Núm. 17
2010
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Optical investigation of ZnO nanowires
Acta Physica Polonica A
2009
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X-ray absorption near-edge structure of GaN with high Mn concentration grown on SiC
Journal of Physics Condensed Matter, Vol. 21, Núm. 29
2008
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X-ray absorption in GaGdN: A study of local structure
Applied Physics Letters, Vol. 93, Núm. 2
2006
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X-ray absorption near edge spectroscopy at the Mn K-edge in highly homogeneous GaMnN diluted magnetic semiconductors
Physica Status Solidi (B) Basic Research
2003
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Optical study of gallium and nitrogen polarity layers of GaN grown on sapphire
Physica Status Solidi C: Conferences
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Study of inversion domain pyramids formed during the GaN:Mg growth
Solid-State Electronics
2002
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Two-dimensional electron gas effects on the photoluminescence from a nonintentionally doped AlGaN/GaN heterojunction
Physica Status Solidi C: Conferences
2001
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Excitonic transitions in homoepitaxial GaN
Physica Status Solidi (B) Basic Research, Vol. 228, Núm. 2, pp. 497-500
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Photoluminescence of Ga-face AlGaN/GaN single heterostructures
Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 82, Núm. 1-3, pp. 200-202
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Photoluminescence study of excitons in homoepitaxial GaN
Journal of Applied Physics, Vol. 90, Núm. 11, pp. 5627-5631
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Residual strain effects on the two-dimensional electron gas concentration of AIGaN/GaN heterostructures
Journal of Applied Physics, Vol. 90, Núm. 9, pp. 4735-4740
2000
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Optical characterization of Mg-doped GaN films grown by metalorganic chemical vapor phase deposition
Journal of Applied Physics, Vol. 88, Núm. 6, pp. 3470-3478
1999
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Growth and optical characterization of indirect-gap AlxGa1-xAs alloys
Journal of Applied Physics, Vol. 86, Núm. 1, pp. 418-424
1997
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The effect of reducing dimensionality on the excitonic recombination in InAs/InP heterostructures
Physica Status Solidi (A) Applied Research, Vol. 164, Núm. 1, pp. 155-158