Publicaciones en colaboración con investigadores/as de Instituto de Ciencia de Materiales de Barcelona (24)

2019

  1. FCC Physics Opportunities: Future Circular Collider Conceptual Design Report Volume 1

    European Physical Journal C, Vol. 79, Núm. 6

  2. FCC-ee: The Lepton Collider: Future Circular Collider Conceptual Design Report Volume 2

    European Physical Journal: Special Topics, Vol. 228, Núm. 2, pp. 261-623

  3. FCC-hh: The Hadron Collider: Future Circular Collider Conceptual Design Report Volume 3

    European Physical Journal: Special Topics, Vol. 228, Núm. 4, pp. 755-1107

  4. HE-LHC: The High-Energy Large Hadron Collider: Future Circular Collider Conceptual Design Report Volume 4

    European Physical Journal: Special Topics, Vol. 228, Núm. 5, pp. 1109-1382

2018

  1. Optical and electronic properties of 2 H-Mo S2 under pressure: Revealing the spin-polarized nature of bulk electronic bands

    Physical Review Materials, Vol. 2, Núm. 5

2016

  1. Nanotexturing to Enhance Photoluminescent Response of Atomically Thin Indium Selenide with Highly Tunable Band Gap

    Nano Letters, Vol. 16, Núm. 5, pp. 3221-3229

2014

  1. Electronic structure, optical properties, and lattice dynamics in atomically thin indium selenide flakes

    Nano Research, Vol. 7, Núm. 10, pp. 1556-1568

2013

  1. High-pressure, high-temperature phase diagram of calcium fluoride from classical atomistic simulations

    Journal of Physical Chemistry C, Vol. 117, Núm. 21, pp. 11292-11301

2012

  1. Role of p-d and s-d interactions in the electronic structure and band gap of Zn 1-xM xO (M=Cr, Mn, Fe, Co, Ni, and Cu): Photoelectron and optical spectroscopy and first-principles band structure calculations

    Physical Review B - Condensed Matter and Materials Physics, Vol. 86, Núm. 15

2009

  1. Chemical effects of band filling and band-gap renormalization on heavily doped ZnO:MIII (Al, Ga and In): A band anti-crossing approach

    AIP Conference Proceedings

  2. Chemical effects on the optical band-gap of heavily doped ZnO: MIII (M=Al,Ga,In): An investigation by means of photoelectron spectroscopy, optical measurements under pressure, and band structure calculations

    Physical Review B - Condensed Matter and Materials Physics, Vol. 79, Núm. 19

2008

  1. High-pressure electronic structure and phase transitions in monoclinic InSe: X-ray diffraction, Raman spectroscopy, and density functional theory

    Physical Review B - Condensed Matter and Materials Physics, Vol. 77, Núm. 4

  2. Nitrogen doping of ceria

    Chemistry of Materials, Vol. 20, Núm. 5, pp. 1682-1684

2007

  1. GaS and InSe equations of state from single crystal diffraction

    Physica Status Solidi (B) Basic Research

  2. Transport measurements under pressure in III-IV layered semiconductors

    Physica Status Solidi (B) Basic Research

2006

  1. High-pressure, high-temperature phase diagram of InSe: A comprehensive study of the electronic and structural properties of the monoclinic phase of InSe under high pressure

    Physical Review B - Condensed Matter and Materials Physics, Vol. 73, Núm. 23

2005

  1. Crystal symmetry and pressure effects on the valence band structure of γ-InSe and ε-GaSe: Transport measurements and electronic structure calculations

    Physical Review B - Condensed Matter and Materials Physics, Vol. 71, Núm. 12

  2. Domain structure of epitaxial SrRuO3 thin films

    Physical Review B - Condensed Matter and Materials Physics, Vol. 71, Núm. 17

2004

  1. Band structure of indium selenide investigated by intrinsic photoluminescence under high pressure

    Physical Review B - Condensed Matter and Materials Physics, Vol. 70, Núm. 12

2003

  1. Lattice dynamics of superconducting zirconium and hafnium nitride halides

    Physical Review B - Condensed Matter and Materials Physics, Vol. 67, Núm. 10, pp. 1045021-1045027