Publicacions en col·laboració amb investigadors/es de Grenoble Alpes University (16)

2023

  1. Ultrathin GaN quantum wells in AlN nanowires for UV-C emission

    Nanotechnology, Vol. 34, Núm. 27

2021

  1. Growth of zinc-blende GaN on muscovite mica by molecular beam epitaxy

    Nanotechnology, Vol. 32, Núm. 2

  2. Resonant Raman scattering of core-shell GaN/AlN nanowires

    Nanotechnology, Vol. 32, Núm. 8

  3. Shallow donor and DX state in Si doped AlN nanowires grown by molecular beam epitaxy

    Applied Physics Letters, Vol. 119, Núm. 26

  4. The role of surface diffusion in the growth mechanism of III-nitride nanowires and nanotubes

    Nanotechnology, Vol. 32, Núm. 8

2020

  1. Impact of kinetics on the growth of GaN on graphene by plasma-assisted molecular beam epitaxy

    Nanotechnology, Vol. 31, Núm. 11

2019

  1. Mg and in Codoped p-type AlN Nanowires for pn Junction Realization

    Nano Letters, Vol. 19, Núm. 12, pp. 8357-8364

  2. Polarity conversion of GaN nanowires grown by plasma-assisted molecular beam epitaxy

    Applied Physics Letters, Vol. 114, Núm. 17

  3. Spontaneous intercalation of Ga and in bilayers during plasma-assisted molecular beam epitaxy growth of GaN on graphene on SiC

    Nanotechnology, Vol. 30, Núm. 37

2018

  1. Dopant radial inhomogeneity in Mg-doped GaN nanowires

    Nanotechnology, Vol. 29, Núm. 25

2016

  1. Direct assessment of p-n junctions in single GaN nanowires by Kelvin probe force microscopy

    Nanotechnology, Vol. 27, Núm. 38

  2. Phonon–plasmon coupling in Si doped GaN nanowires

    Materials Science in Semiconductor Processing, Vol. 55, pp. 63-66

  3. Unraveling the strain state of GaN down to single nanowires

    Journal of Applied Physics, Vol. 120, Núm. 22

2015

  1. Assessment of Polarity in GaN Self-Assembled Nanowires by Electrical Force Microscopy

    Nano Letters, Vol. 15, Núm. 10, pp. 6770-6776

  2. Si Donor Incorporation in GaN Nanowires

    Nano Letters, Vol. 15, Núm. 10, pp. 6794-6801

2007

  1. Evaluation of strain in GaN/AlN quantum dots by means of resonant Raman scattering: The effect of capping

    Physica Status Solidi (C) Current Topics in Solid State Physics