Argitalpenak (59) ALBERTO GARCIA CRISTOBAL argitalpenak

2024

  1. Excitons in layered BiI3: Effects of dimensionality and crystal anisotropy

    Physical Review B, Vol. 109, Núm. 15

2023

  1. Ultrathin GaN quantum wells in AlN nanowires for UV-C emission

    Nanotechnology, Vol. 34, Núm. 27

2022

  1. Multiscale Kinetic Monte Carlo Simulation of Self-Organized Growth of GaN/AlN Quantum Dots

    Nanomaterials, Vol. 12, Núm. 17

2021

  1. Resonant Raman scattering of core-shell GaN/AlN nanowires

    Nanotechnology, Vol. 32, Núm. 8

2020

  1. Thermally Tunable Surface Acoustic Wave Cavities

    IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control, Vol. 67, Núm. 4, pp. 850-854

2019

  1. Elemental distribution and structural characterization of gan/ingan core-shell single nanowires by hard x-ray synchrotron nanoprobes

    Nanomaterials, Vol. 9, Núm. 5

  2. Topology Driven g -Factor Tuning in Type-II Quantum Dots

    Physical Review Applied, Vol. 11, Núm. 4

2017

  1. Fermi energy dependence of the optical emission in core/shell InAs nanowire homostructures

    Nanotechnology, Vol. 28, Núm. 29

2016

  1. Electronic and optical properties of InN nanowires

    Materials Science in Semiconductor Processing, Vol. 55, pp. 85-89

  2. Optical properties of wurtzite GaN/AlN quantum dots grown on non-polar planes: The effect of stacking faults in the reduction of the internal electric field

    Materials Science in Semiconductor Processing, Vol. 49, pp. 76-80

  3. Reprint of: Optical properties of wurtzite GaN/AlN quantum dots grown on non-polar planes: The effect of stacking faults in the reduction of the internal electric field

    Materials Science in Semiconductor Processing, Vol. 55, pp. 90-94

  4. The generalized plane piezoelectric problem: Theoretical formulation and application to heterostructure nanowires

    International Journal of Solids and Structures, Vol. 100-101, pp. 257-269

2014

  1. Spontaneous core-shell elemental distribution in In-rich InxGa1-xN nanowires grown by molecular beam epitaxy

    Nanotechnology, Vol. 25, Núm. 7

2012

  1. Acoustically driven photon antibunching in nanowires

    Nano Letters, Vol. 12, Núm. 1, pp. 252-258

  2. Anisotropic optical response of GaN and AlN nanowires

    Journal of Physics Condensed Matter, Vol. 24, Núm. 29

  3. Carrier transport in GaAs nanowires using surface acoustic waves

    Materials Research Society Symposium Proceedings

  4. Inhomogeneous electron distribution in InN nanowires: Influence on the optical properties

    Physica Status Solidi (C) Current Topics in Solid State Physics, Vol. 9, Núm. 3-4, pp. 1001-1004

  5. Semiempirical pseudopotential approach for nitride-based nanostructures and ab initio based passivation of free surfaces

    Physical Review B - Condensed Matter and Materials Physics, Vol. 86, Núm. 20

2011

  1. Optical properties of nitride nanostructures

    Annalen der Physik (Leipzig), Vol. 523, Núm. 1-2, pp. 51-61

2010

  1. Inhomogeneous free-electron distribution in InN nanowires: Photoluminescence excitation experiments

    Physical Review B - Condensed Matter and Materials Physics, Vol. 82, Núm. 12