Publicaciones en las que colabora con ALFREDO SEGURA GARCIA DEL RIO (37)

2018

  1. Optical and electronic properties of 2 H-Mo S2 under pressure: Revealing the spin-polarized nature of bulk electronic bands

    Physical Review Materials, Vol. 2, Núm. 5

  2. Study of the Secondary Electron Yield in Dielectrics Using Equivalent Circuital Models

    IEEE Transactions on Plasma Science, Vol. 46, Núm. 4, pp. 859-867

2016

  1. Nanotexturing to Enhance Photoluminescent Response of Atomically Thin Indium Selenide with Highly Tunable Band Gap

    Nano Letters, Vol. 16, Núm. 5, pp. 3221-3229

2014

  1. Electronic structure, optical properties, and lattice dynamics in atomically thin indium selenide flakes

    Nano Research, Vol. 7, Núm. 10, pp. 1556-1568

2012

  1. Role of p-d and s-d interactions in the electronic structure and band gap of Zn 1-xM xO (M=Cr, Mn, Fe, Co, Ni, and Cu): Photoelectron and optical spectroscopy and first-principles band structure calculations

    Physical Review B - Condensed Matter and Materials Physics, Vol. 86, Núm. 15

  2. Trapping of three-dimensional electrons and transition to two-dimensional transport in the three-dimensional topological insulator Bi 2Se 3 under high pressure

    Physical Review B - Condensed Matter and Materials Physics, Vol. 85, Núm. 19

2011

  1. Current underestimation of the optical gap and Burstein-Moss shift in CdO thin films: A consequence of extended misuse of α2-versus-hν plots

    Applied Physics Letters, Vol. 99, Núm. 15

2010

  1. Absence of ferromagnetism in single-phase wurtzite Zn1-xMn xO polycrystalline thin films

    Journal of Applied Physics, Vol. 108, Núm. 7

  2. Charge-transfer absorption band in Zn1-xMx O (M: Co, Mn) investigated by means of photoconductivity, Ga doping, and optical measurements under pressure

    Applied Physics Letters, Vol. 96, Núm. 24

2009

  1. Chemical effects of band filling and band-gap renormalization on heavily doped ZnO:MIII (Al, Ga and In): A band anti-crossing approach

    AIP Conference Proceedings

  2. Chemical effects on the optical band-gap of heavily doped ZnO: MIII (M=Al,Ga,In): An investigation by means of photoelectron spectroscopy, optical measurements under pressure, and band structure calculations

    Physical Review B - Condensed Matter and Materials Physics, Vol. 79, Núm. 19

  3. Dependence of electrically active centers content with the growth temperature in heavily Ga-doped ZnO thin films: Correlation between optical, structural and transport properties

    AIP Conference Proceedings

2008

  1. Electronic structure of p-type ultraviolet-transparent conducting CuScO2 films

    Thin Solid Films, Vol. 516, Núm. 7, pp. 1431-1433

  2. Study of the bandgap renormalization in Ga-doped ZnO films by means of optical absorption under high pressure and photoelectron spectroscopy

    Superlattices and Microstructures, Vol. 43, Núm. 4, pp. 362-367

2007

  1. Buildup of the InSe/M interface (M {double bond, long} Pd, Au) studied by X-ray photoemission and X-ray absorption spectroscopy

    Surface Science, Vol. 601, Núm. 18, pp. 3778-3783

  2. High pressure X-ray absorption spectroscopy on Zn1-xMn xO (x=0.25 and x=0.05) at the Mn K edge

    AIP Conference Proceedings

  3. Optical, X-ray absorption and photoelectron spectroscopy investigation of the Co site configuration in Zn1-xCoxO films prepared by pulsed laser deposition

    Superlattices and Microstructures, Vol. 42, Núm. 1-6, pp. 226-230

  4. Pressure dependence of the optical properties of wurtzite and rock-salt Zn1-xCoxO thin films

    Physica Status Solidi (B) Basic Research

  5. Structural and optical high-pressure study of spinel-type MnIn 2S4

    Physica Status Solidi (B) Basic Research

  6. Tetrahedral versus octahedral Mn site coordination in wurtzite and rocksalt Zn1-xMnxO investigated by means of XAS experiments under high pressure

    Superlattices and Microstructures, Vol. 42, Núm. 1-6, pp. 251-254