Centro de Investigación y de Estudios Avanzados -ko ikertzaileekin lankidetzan egindako argitalpenak (16)

2017

  1. Electronic structure, lattice dynamics, and optical properties of a novel van der Waals semiconductor heterostructure: InGaSe2

    Physical Review B, Vol. 96, Núm. 3

2015

  1. Ab initio structural and electronic band-structure study of MgSe

    Physica Status Solidi (B) Basic Research, Vol. 252, Núm. 4, pp. 663-669

  2. High pressure semiconductor physics

    Physica Status Solidi (B) Basic Research

2013

  1. Ab initio electronic band structure study of III-VI layered semiconductors

    European Physical Journal B, Vol. 86, Núm. 8

2012

  1. Raman measurements on GaN thin films for PV - Purposes

    Conference Record of the IEEE Photovoltaic Specialists Conference

2011

  1. Gallium nitride thin films as processed by several techniques: Their possible applications for PV-devices

    Conference Record of the IEEE Photovoltaic Specialists Conference

2009

  1. X-ray absorption near-edge structure of GaN with high Mn concentration grown on SiC

    Journal of Physics Condensed Matter, Vol. 21, Núm. 29

2008

  1. Study of the recombination around the excitonic region of MBE ZnSe:Cl thin films

    Microelectronics Journal, Vol. 39, Núm. 3-4, pp. 582-585

2007

  1. Effect of pressure on the structural properties and electronic band structure of GaSe

    Physica Status Solidi (B) Basic Research

2006

  1. X-ray absorption near edge spectroscopy at the Mn K-edge in highly homogeneous GaMnN diluted magnetic semiconductors

    Physica Status Solidi (B) Basic Research

2003

  1. Effect of impurities on Raman and photoluminescence spectra of AlN bulk crystals

    Materials Research Society Symposium - Proceedings

  2. Effect of pressure on structural properties and energy band gaps of γ-InSe

    Physica Status Solidi (B) Basic Research

  3. Pressure dependence of optical phonons in ZnCdSe alloys

    Physica Status Solidi (B) Basic Research

2002

  1. Raman spectroscopy and photoluminescence of ZnTe thin films grown on GaAs

    Journal of Applied Physics, Vol. 92, Núm. 10, pp. 6014-6018

  2. Temperature dependence of Raman scattering and luminescence of the disordered Zn0.5Cd0.5Se alloy

    Microelectronics Journal

2000

  1. Effect of pressure on direct optical transitions of γ-InSe

    Physica Status Solidi (B) Basic Research, Vol. 221, Núm. 2, pp. 777-787