Fotónica y semiconductores
FOSE
Université de Toulouse
Tolosa, FranciaUniversité de Toulouse-ko ikertzaileekin lankidetzan egindako argitalpenak (6)
2013
-
Method for improving the electrical insulating properties of wet thermal oxide of AlAsSb on GaSb substrates
Applied Physics Letters, Vol. 103, Núm. 10
2010
-
Electronic structure of indium selenide probed by magnetoabsorption spectroscopy under high pressure
Physical Review B - Condensed Matter and Materials Physics, Vol. 81, Núm. 20
2009
-
High pressure and high magnetic field behaviour of free and donor-bound-exciton photoluminescence in InSe
Physica Status Solidi (B) Basic Research, Vol. 246, Núm. 3, pp. 532-535
2008
-
Real-time in situ monitoring of wet thermal oxidation for precise confinement in VCSELs
Semiconductor Science and Technology, Vol. 23, Núm. 10
-
Structure-induced effects on the selective wet thermal oxidation of digital AlxGa1-xAs alloys
Journal of Materials Research, Vol. 23, Núm. 11, pp. 3006-3012
-
Study and fabrication of buried oxide layers in GaAs/AlAs structures for confinement engineering in photonic devices
Proceedings of SPIE - The International Society for Optical Engineering