Chemical effects of band filling and band-gap renormalization on heavily doped ZnO:M<sub>III</sub> (Al, Ga and In): A band anti-crossing approach
- Sans, J. A.
- Sanchez-Royo, J. F.
- Tobias-Rossell, G.
- Canadell-Casanova, E.
- Segura, A.
- Caldas, MJ (coord.)
- Studart, N (coord.)
ISSN: 0094-243X
ISBN: 978-0-7354-0736-7
Argitalpen urtea: 2009
Alea: 1199
Orrialdeak: 105-106
Biltzarra: 29th International Conference on Physics of Semiconductors
Mota: Biltzar ekarpena