Chemical effects of band filling and band-gap renormalization on heavily doped ZnO:M<sub>III</sub> (Al, Ga and In): A band anti-crossing approach

  1. Sans, J. A.
  2. Sanchez-Royo, J. F.
  3. Tobias-Rossell, G.
  4. Canadell-Casanova, E.
  5. Segura, A.
Book Series:
PHYSICS OF SEMICONDUCTORS
  1. Caldas, MJ (coord.)
  2. Studart, N (coord.)

ISSN: 0094-243X

ISBN: 978-0-7354-0736-7

Year of publication: 2009

Volume: 1199

Pages: 105-106

Congress: 29th International Conference on Physics of Semiconductors

Type: Conference paper

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Data source: WoS