A Simulation-based Study of Gate Misalignment Effects in Triple-Material Double-Gate (TM DG) MOSFETs

  1. Sarangi, Santunu
  2. Bhushan, Shiv
  3. Krishna, Gopi S.
  4. Santra, Abirmoya
  5. Tiwari, P. K.
Libro:
2013 IEEE INTERNATIONAL MULTI CONFERENCE ON AUTOMATION, COMPUTING, COMMUNICATION, CONTROL AND COMPRESSED SENSING (IMAC4S)

ISBN: 978-1-4673-5090-7,  978-1-4673-5089-1

Año de publicación: 2013

Páginas: 486-489

Congreso: IEEE International Multi Conference on Automation, Computing, Control, Communication and Compressed Sensing (iMac4s)

Tipo: Aportación congreso

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Fuente de los datos: WoS