A Simulation-based Study of Gate Misalignment Effects in Triple-Material Double-Gate (TM DG) MOSFETs
- Sarangi, Santunu
- Bhushan, Shiv
- Krishna, Gopi S.
- Santra, Abirmoya
- Tiwari, P. K.
ISBN: 978-1-4673-5090-7, 978-1-4673-5089-1
Datum der Publikation: 2013
Seiten: 486-489
Kongress: IEEE International Multi Conference on Automation, Computing, Control, Communication and Compressed Sensing (iMac4s)
Art: Konferenz-Beitrag