Bias-stress instabilities in low-temperature thin-film transistors made of Al2O3 and ZnO films deposited by PEALD

  1. Castillo-Saenz, J.R.
  2. Nedev, N.
  3. Martinez-Guerra, E.
  4. Valdez-Salas, B.
  5. Mendivil-Palma, M.I.
  6. Curiel-Alvarez, M.A.
  7. Aleman, M.
  8. Lopez-Castillo, M.
  9. Hernández-López, J.L.
  10. Toledo-Guizar, P.G.
  11. Hernández-Como, N.
Aldizkaria:
Microelectronic Engineering

ISSN: 0167-9317

Argitalpen urtea: 2022

Alea: 259

Mota: Artikulua

DOI: 10.1016/J.MEE.2022.111788 GOOGLE SCHOLAR