Bias-stress instabilities in low-temperature thin-film transistors made of Al2O3 and ZnO films deposited by PEALD
- Castillo-Saenz, J.R.
- Nedev, N.
- Martinez-Guerra, E.
- Valdez-Salas, B.
- Mendivil-Palma, M.I.
- Curiel-Alvarez, M.A.
- Aleman, M.
- Lopez-Castillo, M.
- Hernández-López, J.L.
- Toledo-Guizar, P.G.
- Hernández-Como, N.
Zeitschrift:
Microelectronic Engineering
ISSN: 0167-9317
Datum der Publikation: 2022
Ausgabe: 259
Art: Artikel