Structural and electronic properties of polycrystalline inas thin films deposited on silicon dioxide and glass at temperatures below 500◦c

  1. Curran, A.
  2. Gocalinska, A.
  3. Pescaglini, A.
  4. Secco, E.
  5. Mura, E.
  6. Thomas, K.
  7. Nagle, R.E.
  8. Sheehan, B.
  9. Povey, I.M.
  10. Pelucchi, E.
  11. O’dwyer, C.
  12. Hurley, P.K.
  13. Gity, F.
Revue:
Crystals

ISSN: 2073-4352

Année de publication: 2021

Volumen: 11

Número: 2

Pages: 1-11

Type: Article

DOI: 10.3390/CRYST11020160 GOOGLE SCHOLAR lock_openAccès ouvert editor
La source de données: Scopus