Investigation of impurity levels in n-type indium selenide by means of Hall effect and deep level transient spectroscopy

  1. Segura, A.
  2. Wünstel, K.
  3. Chevy, A.
Revue:
Applied Physics A Solids and Surfaces

ISSN: 0721-7250,  1432-0630

Année de publication: 1983

Volumen: 31

Número: 3

Pages: 139-145

Type: Article

DOI: 10.1007/BF00624719 GOOGLE SCHOLAR
La source de données: Scopus