Investigation of impurity levels in n-type indium selenide by means of Hall effect and deep level transient spectroscopy

  1. Segura, A.
  2. Wünstel, K.
  3. Chevy, A.
Aldizkaria:
Applied Physics A Solids and Surfaces

ISSN: 0721-7250 1432-0630

Argitalpen urtea: 1983

Alea: 31

Zenbakia: 3

Orrialdeak: 139-145

Mota: Artikulua

DOI: 10.1007/BF00624719 GOOGLE SCHOLAR