Near Room-Temperature Memory Devices Based on Hybrid Spin-Crossover@SiO2Nanoparticles Coupled to Single-Layer Graphene Nanoelectrodes

  1. Holovchenko, A.
  2. Dugay, J.
  3. Giménez-Marqués, M.
  4. Torres-Cavanillas, R.
  5. Coronado, E.
  6. van der Zant, H.S.J.
Revue:
Advanced Materials

ISSN: 1521-4095,  0935-9648

Année de publication: 2016

Volumen: 28

Número: 33

Pages: 7228-7233

Type: Article

DOI: 10.1002/ADMA.201600890 GOOGLE SCHOLAR
La source de données: Scopus