Transport measurements in InSe under high pressure and high temperature: Shallow-to-deep donor transformation of Sn related donor impurities

  1. Errandonea, D.
  2. Segura, A.
  3. Manjón, F.J.
  4. Chevy, A.
Revue:
Semiconductor Science and Technology

ISSN: 0268-1242

Année de publication: 2003

Volumen: 18

Número: 4

Pages: 241-246

Type: Article

DOI: 10.1088/0268-1242/18/4/308 GOOGLE SCHOLAR
La source de données: Scopus