Role of defect centers in recombination processes in GaN monocrystals

  1. Joshi, N.V.
  2. Cros, A.
  3. Cantarero, A.
  4. Medina, H.
  5. Ambacher, O.
  6. Stutzmann, M.
Revue:
Applied Physics Letters

ISSN: 0003-6951

Année de publication: 2002

Volumen: 80

Número: 16

Pages: 2824-2826

Type: Article

DOI: 10.1063/1.1471938 GOOGLE SCHOLAR
La source de données: Scopus