ANDRES
CANTARERO SAEZ
CATEDRÁTICO/A DE UNIVERSIDAD
Instituto de Microelectrónica de Madrid
Madrid, EspañaPublicaciones en colaboración con investigadores/as de Instituto de Microelectrónica de Madrid (11)
2019
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Nanowires: A route to efficient thermoelectric devices
Physica E: Low-Dimensional Systems and Nanostructures, Vol. 113, pp. 213-225
2016
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The fingerprint of Te-rich and stoichiometric Bi2Te3 nanowires by Raman spectroscopy
Nanotechnology, Vol. 27, Núm. 7
2010
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Characterisation of multi-layer InAs/InP quantum wires by surface photovoltage and photoluminescence spectroscopies
Journal of Physics: Conference Series
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Surface photovoltage and photoluminescence spectroscopy of self-assembled InAs/InP quantum wires
Journal of Physics: Conference Series
2008
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Raman study of self-assembled InAs/InP quantum wire stacks with varying spacer thickness
Journal of Applied Physics, Vol. 104, Núm. 3
2007
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Raman study of InAs/InP quantum wires
AIP Conference Proceedings
2003
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Pressure dependence of optical phonons in ZnCdSe alloys
Physica Status Solidi (B) Basic Research
2002
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Raman spectroscopy and photoluminescence of ZnTe thin films grown on GaAs
Journal of Applied Physics, Vol. 92, Núm. 10, pp. 6014-6018
2000
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Band alignments in InxGa1-xP/GaAs heterostructures investigated by pressure experiments
Physica Status Solidi (A) Applied Research, Vol. 178, Núm. 1, pp. 571-576
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Raman scattering and infrared reflectivity in [(InP)5(In0.49Ga0.51As)8] 30 superlattices
Journal of Applied Physics, Vol. 88, Núm. 11, pp. 6382-6387
1997
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The effect of reducing dimensionality on the excitonic recombination in InAs/InP heterostructures
Physica Status Solidi (A) Applied Research, Vol. 164, Núm. 1, pp. 155-158