Instituto de Ciencia de Materiales de Barcelona -ko ikertzaileekin lankidetzan egindako argitalpenak (3)

2007

  1. GaS and InSe equations of state from single crystal diffraction

    Physica Status Solidi (B) Basic Research

2003

  1. Specific features of the electronic structure of III-VI layered semiconductors: Recent results on structural and optical measurements under pressure and electronic structure calculations

    Physica Status Solidi (B) Basic Research

2002

  1. Angle-resolved photoemission study and first-principles calculation of the electronic structure of GaTe

    Physical Review B - Condensed Matter and Materials Physics, Vol. 65, Núm. 11, pp. 1152011-1152018