Publicaciones en las que colabora con JUAN FRANCISCO SANCHEZ ROYO (12)

2009

  1. Dependence of electrically active centers content with the growth temperature in heavily Ga-doped ZnO thin films: Correlation between optical, structural and transport properties

    AIP Conference Proceedings

2008

  1. Electronic structure of p-type ultraviolet-transparent conducting CuScO2 films

    Thin Solid Films, Vol. 516, Núm. 7, pp. 1431-1433

2007

  1. Buildup of the InSe/M interface (M {double bond, long} Pd, Au) studied by X-ray photoemission and X-ray absorption spectroscopy

    Surface Science, Vol. 601, Núm. 18, pp. 3778-3783

  2. High pressure X-ray absorption spectroscopy on Zn1-xMn xO (x=0.25 and x=0.05) at the Mn K edge

    AIP Conference Proceedings

  3. Optical, X-ray absorption and photoelectron spectroscopy investigation of the Co site configuration in Zn1-xCoxO films prepared by pulsed laser deposition

    Superlattices and Microstructures, Vol. 42, Núm. 1-6, pp. 226-230

  4. Structural and optical high-pressure study of spinel-type MnIn 2S4

    Physica Status Solidi (B) Basic Research

  5. Tetrahedral versus octahedral Mn site coordination in wurtzite and rocksalt Zn1-xMnxO investigated by means of XAS experiments under high pressure

    Superlattices and Microstructures, Vol. 42, Núm. 1-6, pp. 251-254

  6. Thermal instability of electrically active centers in heavily Ga-doped ZnO thin films: X-ray absorption study of the Ga-site configuration

    Applied Physics Letters, Vol. 91, Núm. 22

2006

  1. Buildup and structure of the InSe Pt interface studied by angle-resolved photoemission and x-ray absorption spectroscopy

    Physical Review B - Condensed Matter and Materials Physics, Vol. 73, Núm. 15

  2. Interdiffusion process in the InSe/Pt interface studied by angle-resolved photoemission

    Surface Science, Vol. 600, Núm. 18, pp. 3734-3738

  3. Local environment of a diluted element under high pressure: Zn 1-xMnxO probed by fluorescence x-ray absorption spectroscopy

    Applied Physics Letters, Vol. 89, Núm. 23

2002

  1. Angle-resolved photoemission study and first-principles calculation of the electronic structure of GaTe

    Physical Review B - Condensed Matter and Materials Physics, Vol. 65, Núm. 11, pp. 1152011-1152018