Instituto de Microelectrónica de Madrid -ko ikertzaileekin lankidetzan egindako argitalpenak (61)

2017

  1. Circularly Polarized Emission from Ensembles of InGaAs/GaAs Quantum Rings

    Silicon, Vol. 9, Núm. 5, pp. 689-693

2015

  1. Fabrication and characterization of near thresholdless lasers at room temperature

    Proceedings of SPIE - The International Society for Optical Engineering

  2. Free spectral range enlargement by selective suppression of optical modes in photonic crystal L7 microcavities

    International Conference on Transparent Optical Networks

  3. Near thresholdless laser operation at room temperature

    Optica, Vol. 2, Núm. 1, pp. 66-69

2013

  1. Excitation power dependence of the Purcell effect in photonic crystal microcavity lasers with quantum wires

    Applied Physics Letters, Vol. 102, Núm. 20

  2. Exciton and multiexciton optical properties of single InAs/GaAs site-controlled quantum dots

    Applied Physics Letters, Vol. 103, Núm. 18

2012

  1. Probing quantum confinement within single core-multishell nanowires

    Nano Letters, Vol. 12, Núm. 11, pp. 5829-5834

  2. Purcell effect in photonic crystal microcavities embedding InAs/InP quantum wires

    Optics Express, Vol. 20, Núm. 7, pp. 7901-7914

  3. Size dependent carrier thermal escape and transfer in bimodally distributed self assembled InAs/GaAs quantum dots

    Journal of Applied Physics, Vol. 111, Núm. 12

2011

  1. Charge control in laterally coupled double quantum dots

    Physical Review B - Condensed Matter and Materials Physics, Vol. 84, Núm. 4

  2. Different strategies towards the deterministic coupling of a single quantum dot to a photonic crystal cavity mode

    International Conference on Transparent Optical Networks

  3. Formation and emission properties of single InGaAs/GaAs quantum dots and pairs grown by droplet epitaxy

    AIP Conference Proceedings

  4. Localization effects on recombination dynamics in InAs/InP self-assembled quantum wires emitting at 1.5 m

    Journal of Applied Physics

  5. Random population model to explain the recombination dynamics in single InAs/GaAs quantum dots under selective optical pumping

    New Journal of Physics, Vol. 13

2010

  1. Emission properties of single InAs/GaAs quantum dot pairs and molecules grown in GaAs nanoholes

    Journal of Physics: Conference Series

  2. Thermal activated carrier transfer between InAs quantum dots in very low density samples

    Journal of Physics: Conference Series

2009

  1. Electrical control of a laterally ordered InAs/InP quantum dash array

    Nanotechnology, Vol. 20, Núm. 47

  2. Single photon emission from site-controlled InAs quantum dots grown on GaAs(001) patterned substrates

    ACS Nano, Vol. 3, Núm. 6, pp. 1513-1517

2008

  1. Competition between carrier recombination and tunneling in quantum dots and rings under the action of electric fields

    Superlattices and Microstructures, Vol. 43, Núm. 5-6, pp. 582-587

  2. Effect of reactive ion beam etching on the photoluminescence of CdTe epitaxial layers

    Journal of Applied Physics, Vol. 103, Núm. 5