Fotónica y semiconductores
FOSE
École Normale Supérieure
París, FranciaPublikationen in Zusammenarbeit mit Forschern von École Normale Supérieure (9)
2019
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Model-independent method for measuring the angular coefficients of B 0 → D ∗− τ + ντ decays
Journal of High Energy Physics, Vol. 2019, Núm. 11
2003
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Vertical stacks of small InAs/GaAs self-assembled dots: Resonant and non-resonant excitation
Physica E: Low-Dimensional Systems and Nanostructures
1998
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Correlation between optical properties and barrier composition in InxGa1-xGaAs quantum wells
Journal of Applied Physics, Vol. 84, Núm. 12, pp. 6832-6840
1997
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Exciton relaxation dynamics in (Zn,Cd)Se/ZnSe quantum well
Physica Status Solidi (A) Applied Research, Vol. 164, Núm. 1, pp. 217-220
1994
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Hole spin relaxation in a n-doped quantum well structure
Surface Science, Vol. 305, Núm. 1-3, pp. 263-266
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Time resolved optical study of vertical transport in Cd0.82Mn0.18Te/CdTe superlattices
Solid State Electronics, Vol. 37, Núm. 4-6, pp. 1121-1124
1993
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Evidence of slow hole spin relaxation in n-modulation doped GaAs/ AlGaAs quantum well structures
Publ by Springer-Verlag GmbH & Company KG, pp. 446-447
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Optical study of vertical transport in Cd0.82Mn0.18Te/CdTe superlattices
Physical Review B, Vol. 48, Núm. 16, pp. 11871-11878
1992
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Hole polarization and slow hole-spin relaxation in an n-doped quantum-well structure
Physical Review B, Vol. 46, Núm. 11, pp. 7292-7295