Fotónica y semiconductores
FOSE
Sichuan University
Chengdú, ChinaPublicacions en col·laboració amb investigadors/es de Sichuan University (6)
2024
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Enhancement of superconductivity and structural phase transitions under pressure in FeTe0.89S0.11
Journal of Alloys and Compounds, Vol. 1003
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Pressure-Sensitive Multiple Superconducting Phases and Their Structural Origin in Van der Waals HfS2 Up to 160 GPa
Physical Review Letters, Vol. 133, Núm. 6
2023
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Metallization and superconductivity with Tc > 12 K in transition metal dichalcogenide HfS2 under pressure
Materials Today Physics, Vol. 34
2022
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General relationship between the band-gap energy and iodine-oxygen bond distance in metal iodates
Physical Review Materials, Vol. 6, Núm. 4
2021
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Evolution of Structural and Electronic Properties of TiSe2under High Pressure
Journal of Physical Chemistry Letters, Vol. 12, Núm. 40, pp. 9859-9867
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Pressure-induced band anticrossing in two adamantine ordered-vacancy compounds: CdGa2S4 and HgGa2S4
Journal of Alloys and Compounds, Vol. 886