Pressure-induced structural and semiconductor-semiconductor transitions in C o0.5 M g0.5 C r2 O4

  1. Rahman, S.
  2. Saqib, H.
  3. Zhang, J.
  4. Errandonea, D.
  5. Menéndez, C.
  6. Cazorla, C.
  7. Samanta, S.
  8. Li, X.
  9. Lu, J.
  10. Wang, L.
Aldizkaria:
Physical Review B

ISSN: 2469-9969 2469-9950

Argitalpen urtea: 2018

Alea: 97

Zenbakia: 17

Mota: Artikulua

DOI: 10.1103/PHYSREVB.97.174102 GOOGLE SCHOLAR