Optical properties of wurtzite GaN/AlN quantum dots grown on non-polar planes: The effect of stacking faults in the reduction of the internal electric field

  1. Budagosky, J.A.
  2. Garro, N.
  3. Cros, A.
  4. García-Cristóbal, A.
  5. Founta, S.
  6. Daudin, B.
Journal:
Materials Science in Semiconductor Processing

ISSN: 1369-8001

Year of publication: 2016

Volume: 49

Pages: 76-80

Type: Article

DOI: 10.1016/J.MSSP.2016.03.022 GOOGLE SCHOLAR
Data source: Scopus