Reprint of: Optical properties of wurtzite GaN/AlN quantum dots grown on non-polar planes: The effect of stacking faults in the reduction of the internal electric field

  1. Budagosky, J.A.
  2. Garro, N.
  3. Cros, A.
  4. García-Cristóbal, A.
  5. Founta, S.
  6. Daudin, B.
Aldizkaria:
Materials Science in Semiconductor Processing

ISSN: 1369-8001

Argitalpen urtea: 2016

Alea: 55

Orrialdeak: 90-94

Mota: Artikulua

DOI: 10.1016/J.MSSP.2016.09.027 GOOGLE SCHOLAR
Datuen iturria: Scopus