Unstable behaviour of normally-off GaN E-HEMT under short-circuit

  1. Martinez, P.J.
  2. Maset, E.
  3. Sanchis-Kilders, E.
  4. Esteve, V.
  5. Jordán, J.
  6. Ejea, J.B.
  7. Ferreres, A.
Journal:
Semiconductor Science and Technology

ISSN: 1361-6641,  0268-1242

Year of publication: 2018

Volume: 33

Issue: 4

Type: Article

DOI: 10.1088/1361-6641/AAB078 GOOGLE SCHOLAR

Sustainable development goals

Data source: Scopus